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silicon carbide valor en euros specification

making a protective coating containing silicon carbide -

The present invention relates to a method for making a protective coating containing silicon carbide on at least a portion of the surface of a substrate

US6347446B1 - Method of making silicon carbide-silicon

A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A

- Magnetic recording media comprising a silicon carbide

US6572958B1 - Magnetic recording media comprising a silicon carbide corrosion barrier layer and a c-overcoat - Google Patents

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Automotive-grade Silicon Carbide diodes - STMicroelectronics

and hyperbolic excitons in silicon carbide of van Haeringen, Phys. Status Solidi 37, 719 Buy article (PDF) EUR 34.95 Unlimited

Low temperature pressureless sintering of silicon carbide

Low temperature pressureless sintering of silicon carbide ceramics with alumina–yttria–magnesia-calciaHyun-Min KIM, Young-Wook KIM Author

WO2004007401A1 - Silicon carbide matrix composite material,

Silicon carbide matrix composite material (1) comprising silicon carbide matrix (2) as a host. The silicon carbide matrix (2) comprises first silicon

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Silicon Carbide Substrates Product Specification

Silicon Carbide Substrates Product Specification《Cree》

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- Method of preparing sintered shapes of silicon carbide -

A series of sintered shapes of silicon carbide of high strength comprising 0.027 to 11.300 atomic percent of one or more members of rare earth oxides

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US7705362B2 - Silicon carbide devices with hybrid well

The hybrid well region may include an implanted p-type silicon carbide well In the drawings and specification, there have been disclosed typical

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Process for producing silicon carbide

Date Dec. 14, 1995Silicon carbide is produced in two steps in that silicon dioxide and a carbon source in a first step is reacted at a temperature

US7998866B2 - Silicon carbide polishing method utilizing

The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition

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of aluminum nitride: silicon carbide alloys - Google Patents

Bulk, low impurity aluminum nitride:silicon carbide (AlN:SiC) alloy single crystals are grown by deposition of vapor species containing Al, Si, N and C

EP2033212B1 - Method of forming a silicon carbide pmos device

forming a silicon carbide pmos device - Google /US2007/010192 priority patent/WO2008005092A2/enspecification and the relevant art and will not

- Method for growing single crystal of silicon carbide -

In feeding a silicon carbide-forming gas generated by a method of heat-subliming silicon carbide or the like to the surface of a seed crystal (2) so

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Technique for growing silicon carbide monocrystals

A sublimation technique of growing silicon carbide single crystals, comprising a parallel arrangement, opposite each other, of the evaporating surface of a

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US6514779B1 - Large area silicon carbide devices and

A silicon carbide device is fabricated by forming a plurality of a same type of silicon carbide devices on at least a portion of a silicon carbide

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