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Murrah (the best milk yielder) and South Kanara (used in agriculture The polymorphism at position 864 (C→T) results in substitution of an

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Unformatted text preview: Corresponding author: T.Mimani, e-mail: [email protected] Mater.Phys.Mech. 4 (2001) 134-137 © 2001 Advanced

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The handle layer was etched and the remaining ultrathin silicon device layerfabricated in the Centre for Nano Science and Engineering (CeNSE) at IISc

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Effect of inhomogeneous mesoporosity and defects on the luminescent properties of slanted silicon nanowires prepared by facile metal-assisted chemical etchin

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201534-granular materials, CO2 sequestration, spray deposition of molten metal, salt-extraction process, manufacturing of Boron Carbide and Silicon

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We report the indium oxide catalyzed growth of the amorphous SiOx nanoropes using the silicon wafer as both source-cum-substrates by thermal evaporation

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Das et al. slid a steel ball on Al-Si flats, they found that the etched surface hardened the alloy and gave rise to silicon particles, and the

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resulting in the two N- and C- terminal clefts coming closer to each as is evident from the crystal structure of the tetra-tandemer (4P99)

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Hiranmoy Mandals 1 research works with 5 citations and 8 reads, including: GaAs/Ge and silicon solar cell capacitance measurement using triangular wave

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In these two cases the silicon is six-co-ordinated, while in the other bis- oder tris-spirocyclischen Derivaten (IIa-c), (IIIb,c) oder (