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4H polytype grain formation in PVT-grown 6H-SiC ingots |

Benedict T. Donnellans 6 research works with 23 citations and 148 reads, including: Bipolar Conduction across a Wafer Bonded p-n Si/SiC Heterojunction

Catalysts based on Fenton reaction for SiC wafer in chemical

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| Growth and Self-Assembly of Silicon–Silicon Carbide

This work describes the growth of silicon–silicon carbide nanoparticles (Si–SiC) and their self-assembly into worm-like 1D hybrid nanostructures

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Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. It occurs in nature as the extremely

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Silicon carbide (SiC) has been proposed as a semiconductor material (OPAMPs).The functional tests have so far been performed using on-wafer

in Wafer Scale Epitaxial Graphene on SiC(0001) | Request PDF

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| Hitachi High Technologies Corporation, Tokyo and other

Masaki Hasegawas 5 research works with 4 citations and 24 reads, including: Observation of a Latent Scratch on Chemo-Mechanical Polished 4H-SiC Wafer

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METHOD FOR PRODUCING SIC EPITAXIAL WAFER - SHOWA DENKO K.K.

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PPT – Sapphire technology market PowerPoint presentation |

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METHOD FOR PRODUCING SIC EPITAXIAL WAFER AND APPARATUS FOR

A method for producing a SiC epitaxial wafer using an apparatus including a mounting plate having a recessed accommodation portion and a satellite disposed

Dow Corning introduces 150 mm silicon carbide SiC wafers |

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Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer

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