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The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition

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locations as diverse as the UK, Asia, Africa, North America, and Europe.fracture pits of reaction-bonded silicon carbide after ultra-precision grinding

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Silicon carbide CAS#: 409-21-2

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Comparing microwave-heated reactions in glass and silicon carbide vials suggests that heating effects alone are responsible for the benefits of

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A. G. Fox; R. K. Hunt; L. C. Maldia; S. W. Wang, 1995: Hot sodium sulphate corrosion of a Nicalon silicon carbide fibre-reinforced lithium